BSG0813NDI
Power Block
Features • Dual asymmetric N-channel OptiMOS™5 MOSFET • Logic level (4.5V rated) • Optimized for high performance buck converters • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Monolithic integrated Schottky like diode
Product Summary
Q1 Q2
VDS 25 25 V
RDS(on),max
VGS=10 V
3 1.2 mW
VGS=4.5 V
4 1.7
ID 50 50 A
S1/D2 (VPhase) (5) S1/D2 (VPhase) (6)
(4) D1 (Vin) Q1 (9)
(3) .
MOSFET
BSG0813NDI
Power Block
Features • Dual asymmetric N-channel OptiMOS™5 MOSFET • Logic level (4.5V rated) • Optimized for high performance buck converters • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Monolithic integrated Schottky like diode
Product Summary
Q1 Q2
VDS 25 25 V
RDS(on),max
VGS=10 V
3 1.2 mW
VGS=4.5 V
4 1.7
ID 50 50 A
S1/D2 (VPhase) (5) S1/D2 (VPhase) (6)
(4) D1 (Vin) Q1 (9)
(3) D1 (Vin)
S1/D2 (VPhase) (7)
Q2 G2 (GLS) (8)
(10)
(2) S1 (VPhase)
(1) G1 (GHS) S2 (GND)
Top view
Type BSG0813NDI
Package PG-TISON8-4
Marking 0813NDI
Maximum ratings, at Tj=25°C, unless otherwise specified 2)
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation
Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 Rev.2.1
I D T C=70 °C, V GS=1.