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BSG0813NDI Datasheet

Part Number BSG0813NDI
Manufacturers Infineon
Logo Infineon
Description MOSFET
Datasheet BSG0813NDI DatasheetBSG0813NDI Datasheet (PDF)

BSG0813NDI Power Block Features • Dual asymmetric N-channel OptiMOS™5 MOSFET • Logic level (4.5V rated) • Optimized for high performance buck converters • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Monolithic integrated Schottky like diode Product Summary Q1 Q2 VDS 25 25 V RDS(on),max VGS=10 V 3 1.2 mW VGS=4.5 V 4 1.7 ID 50 50 A S1/D2 (VPhase) (5) S1/D2 (VPhase) (6) (4) D1 (Vin) Q1 (9) (3) .

  BSG0813NDI   BSG0813NDI






MOSFET

BSG0813NDI Power Block Features • Dual asymmetric N-channel OptiMOS™5 MOSFET • Logic level (4.5V rated) • Optimized for high performance buck converters • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC61249-2-21 • Monolithic integrated Schottky like diode Product Summary Q1 Q2 VDS 25 25 V RDS(on),max VGS=10 V 3 1.2 mW VGS=4.5 V 4 1.7 ID 50 50 A S1/D2 (VPhase) (5) S1/D2 (VPhase) (6) (4) D1 (Vin) Q1 (9) (3) D1 (Vin) S1/D2 (VPhase) (7) Q2 G2 (GLS) (8) (10) (2) S1 (VPhase) (1) G1 (GHS) S2 (GND) Top view Type BSG0813NDI Package PG-TISON8-4 Marking 0813NDI Maximum ratings, at Tj=25°C, unless otherwise specified 2) Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) J-STD20 and JESD22 Rev.2.1 I D T C=70 °C, V GS=1.


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