BSH103

DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage M3D088 BSH103 N-channel enhancement mode MOS transistor Product specification Supersedes data of 1998 Jan 30 File under Discrete Semiconductors, SC13b 1998 Feb 11 Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES Very low threshold High-speed switching No secondary breakdown Direct interface to C-MOS, TTL etc. APPLICATIONS Power management DC to DC converters Battery powered applications ‘Glue-logic’; interface between logic blocks and/or periphery General purpose switch. 1 Top view 2 MAM273 BSH103 PINNING - SOT23 PIN 1 2 3 SYMBOL g s d gate source drain DESCRIPTION handbook, halfpage 3 d g s DESCRIPTION N-channel enhancement mode MOS transistor in a SOT23 SMD package. QUICK REFERENCE DATA SYMBOL VDS VSD VGS VGSth ID RDSon Ptot PARAMETERS drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS ; ID = 1 mA Ts = 80 °C VGS = 2.5 V; ID = 0.5 A Ts = 80 °C CAUTION VGD = 0; IS = 0.5 A CONDITIONS − − − 0.4 − − − MIN. Fig.1 Simplified outline and symbol. MAX. 30 1 ±8 − 0.85 0.5 0.5 V V V V A Ω W UNIT This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-3...