BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 August 2000 Product specification
1. Description
N...
BSH121
N-channel enhancement mode field-effect transistor
Rev. 01 — 14 August 2000 Product specification
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323.
2. Features
s s s s TrenchMOS™ technology Very fast switching Low threshold
voltage Subminiature surface mount package.
3. Applications
s Battery management s High speed switch s Logic level translator.
c c
4. Pinning information
Table 1: Pin 1 2 3 Pinning - SOT323, simplified outline and symbol Description gate (g)
3
d
Simplified outline
Symbol
source (s) drain (d)
g
1 Top view
2
MBC870
s
03ab30
SOT323
N-channel
MOSFET
1.
TrenchMOS is a trademark of Royal Philips Electronics.
Philips Semiconductors
BSH121
N-channel enhancement mode field-effect transistor
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 4.5 V Tsp = 25 °C VGS = 4.5 V; ID = 500 mA VGS = 2.5 V; ID = 75 mA VGS = 1.8 V; ID = 75 mA Typ − − − − 2.3 2.4 3.1 Max 55 300 0.7 150 4.0 5.0 8.0 Unit V mA W °C Ω Ω Ω drain-source
voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source
voltage (DC) drain-gate
voltage (DC) gate-source
voltage (DC) drain curren...