DatasheetsPDF.com

BSH205 Datasheet

Part Number BSH205
Manufacturers NXP
Logo NXP
Description P-channel enhancement mode MOS transistor
Datasheet BSH205 DatasheetBSH205 Datasheet (PDF)

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH205 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -0.75 A RDS(ON) ≤ 0.5 Ω (VGS = -2.5 V) VGS(TO) ≥ 0.4 V d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal .

  BSH205   BSH205






Part Number BSH207
Manufacturers NXP
Logo NXP
Description P-channel enhancement mode MOS transistor
Datasheet BSH205 DatasheetBSH207 Datasheet (PDF)

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH207 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -1.52 A RDS(ON) ≤ 0.15 Ω (VGS = -2.5 V) VGS(TO) ≥ 0.4 V d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal.

  BSH205   BSH205







Part Number BSH206
Manufacturers NXP
Logo NXP
Description P-channel enhancement mode MOS transistor
Datasheet BSH205 DatasheetBSH206 Datasheet (PDF)

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH206 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -0.75 A RDS(ON) ≤ 0.5 Ω (VGS = -2.5 V) VGS(TO) ≥ 0.4 V d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal .

  BSH205   BSH205







Part Number BSH205G2
Manufacturers nexperia
Logo nexperia
Description P-channel Trench MOSFET
Datasheet BSH205 DatasheetBSH205G2 Datasheet (PDF)

BSH205G2 20 V, P-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Low threshold voltage • Low on-state resistance • Trench MOSFET technology • Enhanced power dissipation capability of 890 mW • AEC-Q101 qualified 3. Applications • Relay driver • High-speed line driver • High-sid.

  BSH205   BSH205







Part Number BSH203
Manufacturers NXP
Logo NXP
Description P-channel enhancement mode MOS transistor
Datasheet BSH205 DatasheetBSH203 Datasheet (PDF)

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH203 SYMBOL s QUICK REFERENCE DATA VDS = -30 V ID = -0.47 A RDS(ON) ≤ 1.1 Ω (VGS = -2.5 V) VGS(TO) ≥ 0.4 V d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal .

  BSH205   BSH205







P-channel enhancement mode MOS transistor

Philips Semiconductors Product specification P-channel enhancement mode MOS transistor FEATURES • Very low threshold voltage • Fast switching • Logic level compatible • Subminiature surface mount package BSH205 SYMBOL s QUICK REFERENCE DATA VDS = -12 V ID = -0.75 A RDS(ON) ≤ 0.5 Ω (VGS = -2.5 V) VGS(TO) ≥ 0.4 V d g GENERAL DESCRIPTION P-channel, enhancement mode, logic level, field-effect power transistor. This device has low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH205 is supplied in the SOT23 subminiature surface mounting package. PINNING PIN 1 2 3 gate source drain DESCRIPTION SOT23 3 Top view 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Ta = 25 ˚C Ta = 100 ˚C Ta = 25 ˚C Ta = 25 ˚C Ta = 100 ˚C MIN. - 55 MAX. -12 -12 ±8 -0.75 -0.47 -3 0.417 0.17 150 UNIT V V V A A A W W ˚C THERMAL RESISTANCES SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient CONDITIONS FR4 board, minimum footprint TYP. 300 MAX. UNIT K/W August 1998 1 Rev 1.000 Philips Semiconductors Product specification P-channel enhancement mode MOS transistor ELECTRICAL CHARACTERISTICS Tj= 25˚C unless other.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)