DISCRETE SEMICONDUCTORS
DATA SHEET
BSH299 P-channel enhancement mode MOS transistor
Objective specification File under ...
DISCRETE SEMICONDUCTORS
DATA SHEET
BSH299 P-channel enhancement mode MOS transistor
Objective specification File under Discrete Semiconductors, SC13b 1998 Feb 18
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
FEATURES Low threshold
voltage High-speed switching No secondary breakdown Direct interface to C-MOS, TTL, etc. APPLICATIONS Power management Battery powered applications e.g. cellular phones General purpose switch.
handbook, halfpage
BSH299
PINNING - SOT363 PIN 1 2 3 4 5 6 SYMBOL d d g s d d DESCRIPTION drain drain gate source drain drain
6
5
4
d
DESCRIPTION P-channel enhancement mode MOS transistor in a SOT363 SMD package.
1 2 3
MAM396
g
s
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source
voltage (DC) gate-source
voltage (DC) gate-source threshold
voltage drain current (DC) drain-source on-state resistance total power dissipation open drain
Top view
Fig.1 Simplified outline and symbol.
CONDITIONS − − ID = −1 mA; VDS = VGS Ts = 80 °C ID = −0.13 A; VGS = −10 V Ts = 80 °C
MIN.
MAX. −50 ±20 −2 −0.2 10 0.7 V V V A Ω W
UNIT
−0.8 − − −
1998 Feb 18
2
Philips Semiconductors
Objective specification
P-channel enhancement mode MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SY...