BSH301

DISCRETE SEMICONDUCTORS DATA SHEET BSH301 Dual N-channel enhancement mode MOS transistor Objective specification 1999 Apr 06 Philips Semiconductors Objective specification Dual N-channel enhancement mode MOS transistor FEATURES 40 mΩ on-state resistance at 2.5 V gate drive RDSon rating down to 1.8 V ESD gate protection. APPLICATIONS Li-Ion safety switch Power management. DESCRIPTION Two N-channel enhancement mode MOS transistors in an 8-pin plastic TSSOP8 package. PINNING SOT530 (TSSOP8) PIN 1 2 3 4 5 6 7 8 SYMBOL d1 s1 s1 g1 g2 s2 s2 d1 DESCRIPTION drain 1 source 1 source 1 gate 1 gate 2 source 2 source 2 drain 1 1 4 MAM423 BSH301 8 handbook, halfpage 5 d1 s2 s2 g2 d1 s1 s1 g1 Fig.1 Simplified outline (SOT530) and symbol. CAUTION The device is supplied in an antistatic package. The gate inputs must be protected against static discharge during transport or handling. QUICK REFERENCE DATA In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VSD VGS VGSth ID RDSon Ptot Note 1. TS is the temperature at the soldering of the drain lead. PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation VDS = VGS; ID = 1 mA TS = 80 °C; note 1 VGS = 2.5 V; ID = 3.5 A TS = 80 °C VGD = 0; IS = 1.25 A CONDITIONS − − − 0.4 − − − MIN. 1 ±8 − 5 0.04 1.75 MAX. 20 V V V V A Ω W UNIT Full Data Sheet will appear: o...