BSL205N

OptiMOS®2 Small-Signal-Transistor Features Dual N-channel Enhancement mode Super Logic level (2.5V rated) Avalanche rated Qualified according to AEC Q101 Pb-free lead plating; RoHS compliant Halogen free according to IEC61249-2-21 BSL205N Product Summary VDS RDS(on),max ID VGS=4.5 V VGS=2.5 V 20 V 50 mW 85 2.5 A PG-TSOP6 65 4 1 23 Type BSL205N Package Tape and Reel Information PG-TSOP6 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter (1) Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=70 °C T A=25 °C Marking sPK Lead Free Packing Yes Non dry Value 2.5 2.0 10 Unit A Avalanche energy, single pulse E AS I D=2.5 A, R GS=25 W 10.8 mJ Reverse diode dv /dt Gate source voltage Power dissipation(3) Operating and storage temperature ESD Class dv /dt I D=2.5 A, V DS=16 V, di /dt =200 A/µs, T j,max=150 °C V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 (1) Remark: one of both transistors in operation. 6 ±12 0.5 -55 ... 150 class 0 (<250V) 260 °C 55/150/56 kV/µs V W °C Rev 2.3 page 1 2013-11-06 Parameter Thermal characteristics Thermal resistance, junction - ambient Symbol Conditions BSL205N min. Values typ. Unit max. R thJA minimal footprint(2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS ...