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BSL215C Datasheet

Part Number BSL215C
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Small-Signal-Transistor
Datasheet BSL215C DatasheetBSL215C Datasheet (PDF)

OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor Features Product Summary · Complementary P + N channel · Enhancement mode · Super Logic level (2.5V rated) · Avalanche rated · Qualified according to AEC Q101 VDS RDS(on),max ID VGS=±4.5 V VGS=±2.5 V BSL215C PN -20 20 V 150 140 mW 280 250 -1.5 1.5 A · 100% lead-free; RoHS compliant · Halogen free according to IEC61249-2-21 PG-TSOP6 65 4 1 2 3 Type BSL215C Package PG-TSOP-6 Tape and Reel Information H6327: 3000 pcs / reel Marking sPH .

  BSL215C   BSL215C






Part Number BSL215P
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Small-Signal-Transistor
Datasheet BSL215C DatasheetBSL215P Datasheet (PDF)

OptiMOS™ P2 Small-Signal-Transistor Features • Dual P-channel • Enhancement mode • Super Logic Level (2.5V rated) • Avalanche rated • Qualified according to AEC Q101 • 100% lead-free; RoHS compliant • Halogen free according to IEC61249-2-21 BSL215P Product Summary VDS RDS(on),max ID -20 V VGS=-4.5 V VGS=-2.5 V 150 mW 280 -1.5 A PG-TSOP6 65 4 12 3 Type Package Tape and Reel Information BSL215P PG-TSOP6 H6327: 3000 pcs/ reel Maximum ratings, at T j=25 °C, unless otherwise specified Pa.

  BSL215C   BSL215C







Small-Signal-Transistor

OptiMOS™2 + OptiMOS™-P 2 Small Signal Transistor Features Product Summary · Complementary P + N channel · Enhancement mode · Super Logic level (2.5V rated) · Avalanche rated · Qualified according to AEC Q101 VDS RDS(on),max ID VGS=±4.5 V VGS=±2.5 V BSL215C PN -20 20 V 150 140 mW 280 250 -1.5 1.5 A · 100% lead-free; RoHS compliant · Halogen free according to IEC61249-2-21 PG-TSOP6 65 4 1 2 3 Type BSL215C Package PG-TSOP-6 Tape and Reel Information H6327: 3000 pcs / reel Marking sPH Lead Free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Symbol Conditions Continuous drain current I D T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage I D,pulse E AS V GS T A=25 °C P: I D=-1.5 A, N: I D=1.5 A, R GS=25 W Power dissipation P tot T A=25 °C Operating and storage temperature T j, T stg ESD class JESD22-A114-HBM Soldering temperature T solder IEC climatic category; DIN IEC 68-1 1) Remark: only one of both transistors active Value PN -1.5 1.5 -1.2 1.2 -6 6 Unit A 11 3.7 mJ ±12 0.5 -55 ... 150 0 (<250V) 260 55/150/56 V W °C °C Rev.2.2 page 1 2013-11-06 Parameter Symbol Conditions BSL215C min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction ambient P R thJA N minimal footprint 2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage P V (BR)D.


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