BSL296SN

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOS™Small-Signal-Transistor,100V BSL296SN DataSheet Rev.2.0 Final Industrial&Multimarket OptiMOS™ Small-Signal-Transistor Features N-channel Enhancement mode Logic level (4.5V rated) Avalanche rated Qualified according to AEC Q101 RoHS compliant Halogen-free according to IEC61249-2-21 BSL296SN Product Summary VDS RDS(on),max ID VGS=10 V VGS=4.5 V 100 V 460 mΩ 560 1.4 A PG-TSOP6 65 4 1 23 Type BSL296SN Package TSOP6 Tape and Reel Info H6327: 3000 pcs/ reel Marking sLZ Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS dv /dt T A=25 °C T A=70 °C T A=25 °C I D=1.4 A, R GS=25 Ω I D=1.4 A, V DS=50 V, di /dt =200 A/µs, T j,max=150 °C Gate source voltage Power dissipation1) Operating and storage temperature ESD Class V GS P tot T A=25 °C T j, T stg JESD22-A114 -HBM Soldering Temperature IEC climatic category; DIN IEC 68-1 Halogen Free Yes Packing Non dry Value 1.4 1.1 5.6 15.0 6 ±20 2.0 -55 ... 150 0 (<250V) 260 °C 55/150/56 Unit A mJ kV/µs V W °C Rev 2.0 page 1 2014-10-16 Parameter Thermal characteristics Symbol Conditions BSL296SN min. Values typ. Unit max. Thermal resistance, junction - soldering point Thermal resistance junction - ambient R thJS R thJA minimal footprint 6 cm2 cooling area1) - - - 50 K/W - 230 ...