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BSL307SP Datasheet

Part Number BSL307SP
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description OptiMOS -P Small-Signal-Transistor
Datasheet BSL307SP DatasheetBSL307SP Datasheet (PDF)

Rev 2.0 BSL307SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated • Qualified according to AEC Q101 • Halogen free according to IEC61249­2­21 Type BSL307SP Package Tape and reel Marking PG-TSOP-6-1 H6327: 3000pcs/r. sPC Product Summary VDS -30 V RDS(on) 43 mΩ ID -5.5 A PG-TSOP-6-1 43 52 61 Gate pin 3 Drain pin 1,2, 5,6 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specif.

  BSL307SP   BSL307SP






OptiMOS -P Small-Signal-Transistor

Rev 2.0 BSL307SP OptiMOS-P Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • 150°C operating temperature • Avalanche rated • dv/dt rated • Qualified according to AEC Q101 • Halogen free according to IEC61249­2­21 Type BSL307SP Package Tape and reel Marking PG-TSOP-6-1 H6327: 3000pcs/r. sPC Product Summary VDS -30 V RDS(on) 43 mΩ ID -5.5 A PG-TSOP-6-1 43 52 61 Gate pin 3 Drain pin 1,2, 5,6 Source pin 4 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C TA=70°C ID Pulsed drain current TA=25°C Avalanche energy, single pulse ID=-5.5 A , VDD=-25V, RGS=25Ω Reverse diode dv/dt ID puls EAS dv/dt IS=-5.5A, VDS=24V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg ESD Class JESD22-A114-HBM Value -5.5 -4.4 -22 44 -6 ±20 2 -55... +150 55/150/56 Class 1a Unit A mJ kV/µs V W °C Page 1 2014-01-09 Thermal Characteristics Parameter Rev 2.0 Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSL307SP Symbol Values Unit min. typ. max. RthJS RthJA - - 50 K/W - - 230 - - 62.5 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA Gate threshold voltage,.


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