BSL316C

BSL316C OptiMOS™ 2 + OptiMOS™-P 2 Small Signal Transistor Features Product Summary · Complementary P + N channel · Enhancement mode · Logic level (4.5V rated) · Avalanche rated · Qualified according to AEC Q101 VDS RDS(on),max ID VGS=±10 V VGS=±4.5 V PN -30 30 V 150 160 mW 270 280 -1.5 1.4 A · 100% lead-free; RoHS compliant · Halogen free according to IEC61249-2-21 PG-TSOP6 6 5 4 1 2 3 Type Package BSL316C PG-TSOP-6 Tape and Reel Information H6327: 3000 pcs / reel Marking sPJ Lead Free Packing Yes Non dry Maximum ratings, at T j=25 °C, unless otherwise specified 1) Parameter Symbol Conditions Continuous drain current I D T A=25 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation1) Operating and storage temperature T A=70 °C I D,pulse T A=25 °C P: I D=-1.5 A, E AS N: I D=1.4 A, R GS=25 W V GS P tot T A=25 °C T j, T stg ESD class JESD22-A114-HBM Soldering temperature T solder IEC climatic category; DIN IEC 68-1 1) Remark: only one of both transistors active Value PN -1.5 1.4 -1.2 1.1 -6.0 5.6 Unit A 11 3.7 mJ ±20 0.5 -55 ... 150 0 (<250V) 260 55/150/56 V W °C °C Rev. 2.3 page 1 2014-07-21 Parameter Symbol Conditions BSL316C min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction ambient1) P R thJA N minimal footprint 2) - - 250 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate thres...