BSM50GD120DN2G

BSM 50 GD 120 DN2G IGBT Power Module Power module 3-phase full-bridge Including fast free-wheel diodes Package with insulated metal base plate Type BSM 50 GD 120 DN2G VCE IC 1200V 78A Package ECONOPACK 3 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage RGE = 20 kΩ Gate-emitter voltage DC collector current TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms TC = 25 °C TC = 80 °C Power dissipation per IGBT TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol VCE VCGR VGE IC ICpuls Ptot Tj Tstg RthJC RthJCD Vis - Ordering Code C67070-A2521-A67 Values Unit 1200 V 1200 ± 20 A 78 50 156 100 W 400 + 150 °C -40 ... + 125 ≤ 0.35 K/W ≤ 0.7 2500 Vac 16 mm 11 F sec 40 / 125 / 56 1 Oct-01-2003 BSM 50 GD 120 DN2G Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. max. Static Characteristics Gate threshold voltage VGE(th) VGE = VCE, IC = 2 mA 4.5 5.5 6.5 Collector-emitter saturation voltage VCE(sat) VGE = 15 V, IC = 50 A, Tj = 25 °C - 2.5 3 VGE = 15 V, IC = 50 A, Tj = 125 °C - 3.1 3.7 Zero gate voltage collector current ICES VCE = 1200 V, VGE = 0 V, Tj = 25 °C - 0.8 1 VCE = 1200 V, VGE = 0 V, Tj = 125 °C - 4 - Gate-emitter leakage curr...