IGBT. BSM50GD120DN2G Datasheet

BSM50GD120DN2G Datasheet PDF


BSM50GD120DN2G
BSM 50 GD 120 DN2G
IGBT Power Module
Preliminary data
• Power module
• 3-phase full-bridge
• Including fast free-wheel diodes
• Package with insulated metal base plate
Type
BSM 50 GD 120 DN2G
VCE IC
1200V 78A
Package
ECONOPACK 3
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 k
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 80 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 80 °C
Power dissipation per IGBT
TC = 25 °C
Chip temperature
Storage temperature
Thermal resistance, chip case
Diode thermal resistance, chip case
Insulation test voltage, t = 1min.
Creepage distance
Clearance
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Symbol
VCE
VCGR
VGE
IC
ICpuls
Ptot
Tj
Tstg
RthJC
RthJCD
Vis
-
-
-
-
Ordering Code
C67070-A2521-A67
Values
1200
Unit
V
1200
± 20
78
50
A
156
100
400
+ 150
-55 ... + 150
0.35
0.7
2500
16
11
F
55 / 150 / 56
W
°C
K/W
Vac
mm
-
Semiconductor Group
1
Aug-23-1996


Part BSM50GD120DN2G
Description IGBT
Feature BSM50GD120DN2G; BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Power module • 3-phase full-bridge • Includ.
Manufacture Siemens Semiconductor Group
Datasheet
Download BSM50GD120DN2G Datasheet


BSM 50 GD 120 DN2G IGBT Power Module • Power module • 3-pha BSM50GD120DN2G Datasheet
BSM 50 GD 120 DN2G IGBT Power Module Preliminary data • Pow BSM50GD120DN2G Datasheet





BSM50GD120DN2G
BSM 50 GD 120 DN2G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Static Characteristics
Gate threshold voltage
VGE(th)
VGE = VCE, IC = 2 mA
4.5 5.5 6.5
Collector-emitter saturation voltage
VCE(sat)
VGE = 15 V, IC = 50 A, Tj = 25 °C
- 2.5 3
VGE = 15 V, IC = 50 A, Tj = 125 °C
- 3.1 3.7
Zero gate voltage collector current
ICES
VCE = 1200 V, VGE = 0 V, Tj = 25 °C
- 0.8 1
VCE = 1200 V, VGE = 0 V, Tj = 125 °C
- 4-
Gate-emitter leakage current
IGES
VGE = 20 V, VCE = 0 V
--
200
AC Characteristics
Transconductance
VCE = 20 V, IC = 50 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
gfs
Ciss
Coss
Crss
23
-
-
-
--
3300 -
500 -
220 -
Unit
V
mA
nA
S
pF
Semiconductor Group
2
Aug-23-1996



BSM50GD120DN2G
BSM 50 GD 120 DN2G
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 50 A
RGon = 22
-
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 50 A
RGon = 22
-
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 50 A
RGoff = 22
-
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 50 A
RGoff = 22
-
44
56
380
70
100
100
500
100
Free-Wheel Diode
Diode forward voltage
IF = 50 A, VGE = 0 V, Tj = 25 °C
IF = 50 A, VGE = 0 V, Tj = 125 °C
Reverse recovery time
IF = 50 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs, Tj = 125 °C
Reverse recovery charge
IF = 50 A, VR = -600 V, VGE = 0 V
diF/dt = -800 A/µs
Tj = 25 °C
Tj = 125 °C
VF
-
-
trr
-
Qrr
-
-
2.3 2.8
1.8 -
0.2 -
2.8 -
8-
Unit
ns
V
µs
µC
Semiconductor Group
3
Aug-23-1996






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