BSO150N03

BSO150N03 OptiMOS®2 Power-Transistor Features Fast switching MOSFET for SMPS Optimized technology for notebook DC/DC Qualified according to JEDEC for target applications Dual n-channel Logic level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Avalanche rated dv /dt rated 1 Product Summary V DS R DS(on),max ID 30 15 9.1 V mΩ A P-DSO-8 Type BSO150N03 Package P-DSO-8 Ordering Code Q67042-S4215 Marking 150N3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 °C2) T A=70 °C2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T A=25 °C2) 2.0 -55 ... 150 55/150/56 T A=25 °C3) I D=9.1 A, R GS=25 Ω I D=9.1 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 9.1 7.3 36 82 6 ±20 1.4 mJ kV/µs V W °C steady state 7.6 6.1 A Unit Rev. 1.11 page 1 2004-02-09 BSO150N03 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area2), t p≤10 s 6 cm2 cooling area2), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltag...