Preliminary data
BSO203P
OptiMOS-P Small-Signal-Transistor
Feature • P-Channel • Enhancement mode • Super Logic Level...
Preliminary data
BSO203P
OptiMOS-P Small-Signal-Transistor
Feature P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated
S1 G1 S2 G2 1 2 3 4 Top View
Product Summary VDS RDS(on) ID
8 7 6 5
-20 21 -8.2
V mΩ A
D1 D1 D2 D2
SIS00070
Type BSO203P
Package SO 8
Ordering Code Q67042-S4072
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value -8.2 -6.6
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
-32.8 97 -6 ±12 2 -55... +150 55/150/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =-8.2 A , VDD =-10V, RGS =25Ω
Reverse diode dv/dt
IS =-8.2A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C
Gate source
voltage Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-01-08
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint, t < 10s @ 6 cm 2 cooling area
1)
BSO203P
Symbol min. RthJS RthJA -
Values typ. max. 50 110 62.5
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown
voltage
VGS =0, ID=-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6
Values typ. 0.9 max. -1.2
Unit
V
Gate threshold
voltage, VGS = VDS
ID =-100µA
Zero gate
voltage...
