BSO211P

Preliminary data BSO211P OptiMOS-P Small-Signal-Transistor Feature Dual P-Channel Enhancement mode Super Logic Level (2.5 V rated) 150°C operating temperature Avalanche rated dv/dt rated S1 G1 S2 G2 1 2 3 4 Top View Product Summary VDS RDS(on) ID 8 7 6 5 -20 67 -4.7 V mΩ A D1 D1 D2 D2 SIS00070 Type BSO211P Package SO 8 Ordering Code Q67042-S4064 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -4.7 -3.8 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -18.8 28 -6 ±12 2 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-4.7 A , VDD =-10V, RGS =25Ω Reverse diode dv/dt IS =-4.7A, VDS =-16V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-22 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint, t<10s @ 6 cm 2 cooling area 1) BSO211P Symbol min. RthJS RthJA - Values typ. max. 50 110 62.5 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -20 -0.6 Values typ. -0.9 max. -1.2 Unit V Gate threshold voltage, VGS = VDS ID =-25µA Zero gate volt...