BSO303SP

Preliminary data BSO303SP OptiMOS-P Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level 150°C operating temperature Avalanche rated dv/dt rated S S S G 1 2 3 4 Top View Product Summary VDS RDS(on) ID -30 21 -8.9 V mΩ A 8 7 6 5 D D D D SIS00062 Type BSO303SP Package SO 8 Ordering Code Q67042-S4129 Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -8.9 -7.1 Unit A Pulsed drain current TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg -35.6 97 -6 ±20 2.35 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID =-8.9 A , VDD =-25V, RGS =25Ω Reverse diode dv/dt IS =-8.9A, VDS =-24V, di/dt=200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-01-08 Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min footprint, t < 10s @ 6 cm 2 cooling area 1) BSO303SP Symbol min. RthJS RthJA - Values typ. max. 35 110 53 Unit K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -30 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-100µA Zero gate voltage drain current VDS =-30V, VG...