DatasheetsPDF.com

BSO350N03 Datasheet

Part Number BSO350N03
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description OptiMOS2 Power-Transistor
Datasheet BSO350N03 DatasheetBSO350N03 Datasheet (PDF)

BSO350N03 OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • Dual n-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • dv /dt rated 1 Product Summary V DS R DS(on),max ID 30 35 6 V mΩ A P-DSO-8 Type BSO350N03 Package P-DSO-8 Ordering Code Q67042-S4217 Marking 350N3 Maximum ratings, at T j=25 °C, unle.

  BSO350N03   BSO350N03






OptiMOS2 Power-Transistor

BSO350N03 OptiMOS®2 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for notebook DC/DC • Qualified according to JEDEC for target applications • Dual n-channel • Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • dv /dt rated 1 Product Summary V DS R DS(on),max ID 30 35 6 V mΩ A P-DSO-8 Type BSO350N03 Package P-DSO-8 Ordering Code Q67042-S4217 Marking 350N3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value 10 secs Continuous drain current ID T A=25 °C2) T A=70 °C2) Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T A=25 °C2) 2.0 -55 ... 150 55/150/56 T A=25 °C3) I D=6 A, R GS=25 Ω I D=6 A, V DS=20 V, di /dt =200 A/µs, T j,max=150 °C 6 4.8 24 8 6 ±20 1.4 mJ kV/µs V W °C steady state 5 4 A Unit Rev. 1.11 page 1 2004-02-09 BSO350N03 Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJS minimal footprint, t p≤10 s minimal footprint, steady state 6 cm2 cooling area2), t p≤10 s 6 cm2 cooling area2), steady state Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate v.


2005-03-23 : 2N2857CSM    2N2880    2N2891    2N2894    2N2894    2N2894    2N2894A    2N2894ACSM    2N2894CSM    2N2894DCSM   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)