Preliminary data OptiMOSâ Small-Signal-Transistor
BSO4420
Product Summary Feature • N-Channel • Logic Level • Very low...
Preliminary data OptiMOSâ Small-Signal-Transistor
BSO4420
Product Summary Feature N-Channel Logic Level Very low on-resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Avalanche rated dv/dt rated Ideal for fast switching applications VDS RDS(on) ID 30 7.8 13 V mΩ A
Type BSO4420
Package SO 8
Ordering Code Q67042-S4027
Marking 4420
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C
Symbol ID ID puls EAS dv/dt VGS Ptot Tj , Tstg
Value 13 52 230 6 ±20 2.5 -55... +150 55/150/56
Unit A
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID =13 A , VDD=25V, RGS =25Ω
mJ kV/µs V W °C
Reverse diode dv/dt
IS =13A, VDS=24V, di/dt=200A/µs, Tjmax =150°C
Gate source
voltage Power dissipation
TA =25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-02-11
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint; t ≤ 10 sec. @ 6 cm 2 cooling area 1); t ≤ 10 sec.
BSO4420
Symbol min. RthJS RthJA -
Values typ. max. 30 110 50
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown
voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold
voltage, VGS = VDS
ID =80µA
Zero gate
voltage drain current
VD...
