BSO604NS2

BSO604NS2 OptiMOS Power-Transistor Feature Dual N-Channel Product Summary VDS R DS(on) ID 55 35 5 P-DSO-8 -7 V mΩ A Enhancement mode Logic Level 150 °C operating temperature Avalanche rated dv/dt rated Type BSO604NS2 Package P-DSO-8 -7 Ordering Code Q67060-S7309 Marking 2N604L Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C, one channel active TA=70°C, one channel active Symbol ID Value 5 4 Unit A Pulsed drain current, one channel active TA=25°C ID puls EAS dv/dt VGS Ptot Tj , Tstg 20 90 6 ±20 2 -55... +150 55/150/56 mJ kV/µs V W °C Avalanche energy, single pulse ID=5 A , VDD=25V, RGS=25Ω Reverse diode dv/dt IS=5A, VDS=44V, di/dt=200A/µs, Tjmax=150°C Gate source voltage Power dissipation, one channel active TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-10-28 BSO604NS2 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB: @ min. footprint ; t ≤ 10 s @ 6 cm2 cooling area 1) ; t ≤10 s Symbol min. RthJS RthJA Values typ. 34 max. 50 100 62.5 Unit - K/W Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, I D=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 55 1.2 Values typ. 1.6 max. 2 Unit V Gate threshold voltage, VGS = VDS ID=30µA Zero gate voltage drain current V DS=5...