Rev. 2.1
BSO 615 C G
SIPMOS® Small-Signal-Transistor
Features
Product Summary
· Dual N- and P -Channel
Drain sourc...
Rev. 2.1
BSO 615 C G
SIPMOS® Small-Signal-Transistor
Features
Product Summary
· Dual N- and P -Channel
Drain source
voltage
· Enhancement mode
Drain-Source on-state
· Logic Level
resistance
· Avalanche rated
Continuous drain current
· Pb-free lead plating; RoHS compliant
VDS RDS(on)
ID
N 60 0.11
3.1
P -60 V
0.3 W
-2 A
Type
Package
Marking
BSO 615 C PG-DSO-8
615C
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
TA = 25 °C TA = 70 °C
Pulsed drain current
TA = 25 °C Avalanche energy, single pulse
WID = 3.1 A , VDD = 25 V, RGS = 25 WID = -2 A , VDD = -25 V, RGS = 25
Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, Tjmax = 150 °C IS = 3.1 A, VDS = 48 V, di/dt = 200 A/µs IS = -2 A, VDS = -48 V, di/dt = -200 A/µs Gate source
voltage
Power dissipation
TA = 25 °C Operating and storage temperature
IEC climatic category; DIN IEC 68-1
ID
ID puls EAS
EAR dv/dt
VGS Ptot Tj , Tstg
Value NP
3.1 ...
