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BSP126 Datasheet

Part Number BSP126
Manufacturers NXP
Logo NXP
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet BSP126 DatasheetBSP126 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. F.

  BSP126   BSP126






Part Number BSP129
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description SIPMOS Small-Signal-Transistor
Datasheet BSP126 DatasheetBSP129 Datasheet (PDF)

SIPMOS® Small-Signal-Transistor Features • N-channel • Depletion mode • dv /dt rated • Available with V GS(th) indicator on reel • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen­free according to IEC61249­2­21 Product Summary VDS RDS(on),max IDSS,min BSP129 240 V 6W 0.05 A PG-SOT223 Type Type BSP129 BBSSPP121929 BSP129 Package Package PG-SOT223 PPGG-S-SOOTT222323 PG-SOT223 Tape and Reel Tape and Reel H6327: 1000 pcs/reel LH66392076: :11000000ppcsc/sr/ereee.

  BSP126   BSP126







Part Number BSP129
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor (N channel Depletion mode High dynamic resistance)
Datasheet BSP126 DatasheetBSP129 Datasheet (PDF)

SIPMOS® Small-Signal Transistor BSP 129 q q q q q q q VDS 240 V ID 0.2 A RDS(on) 20 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S 4 D BSP 129 SOT-223 BSP 129 Q67000-S073 E6327: 1000 pcs/reel BSP 129 Q67000-S314 E7941: 1000 pcs/reel VGS(th) selected in groups: (see page 212) Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source vo.

  BSP126   BSP126







Part Number BSP128
Manufacturers NXP
Logo NXP
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet BSP126 DatasheetBSP128 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BSP128 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interru.

  BSP126   BSP126







Part Number BSP127
Manufacturers NXP
Logo NXP
Description N-channel enhancement mode vertical D-MOS transistor
Datasheet BSP126 DatasheetBSP127 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET BSP127 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope and intended for use as a line current interru.

  BSP126   BSP126







N-channel enhancement mode vertical D-MOS transistor

DISCRETE SEMICONDUCTORS DATA SHEET BSP126 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a miniature SOT223 envelope and designed for use as a line interrupter in telephone sets and for application in relay, high-speed and line-transformer drivers. FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching. • No secondary breakdown. PINNING - SOT223 1 = gate 2 = drain 3 = source 4 = drain Marking code BSP126 QUICK REFERENCE DATA Drain-source voltage Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source on-resistance ID = 300 mA; VGS = 10 V Gate-source threshold voltage RDS(on) VGS(th) VDS ID Ptot BSP126 max. max. max. typ. max. max. 250 V 350 mA 1.5 W 5.0 Ω 7.0 Ω 2 V PIN CONFIGURATION handbook, halfpage 4 d g 1 Top view 2 3 MAM054 s Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to.


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