SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR
ISSUE 3 FEBRUARY 1996 FEATURES * High VCEO * Low saturation voltage ...
SOT223 PNP SILICON PLANAR HIGH
VOLTAGE TRANSISTOR
ISSUE 3 FEBRUARY 1996 FEATURES * High VCEO * Low saturation
voltage C
BSP15
COMPLEMENTARY TYPE: PARTMARKING DETAIL:
BSP20 BSP15 B
E C
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg VALUE -200 -200 -5 -1 -0.5 2 -55 to +150 UNIT V V V A A W °C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER Collector-Base Breakdown
Voltage Collector-Emitter Breakdown
Voltage Emitter-Base Breakdown
Voltage Collector Cut-Off Current Emitter Cut-Off Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO MIN. -200 -200 -5 -1 -20 - 2.0 -0.5 30 15 15 150 MHz pF MAX. UNIT V V V
µA µA
CONDITIONS. IC=-100µ A IC=-10mA* IE=-100µ A VCB=-175V VEB=-4V IC=-50mA, IB=-5mA* IC=-30mA, IB=-3mA* IC=-50mA, VCE=-10V* IC=-10mA, VCE=-20V* f = 20MHz VCB=-10V, f=1MHz
Collector-Emitter Saturation VCE(sat)
Voltage Static Forward Current Transfer Ratio Transition Frequency Output Capacitance hFE fT Cobo
V V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% For typical characteristics graphs see FMMTA92 datasheet. 3 - 58
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