BSP20A

SMD Type NPN Silicon Epitaxial Transistor BSP20A SOT-223 6.50 +0.2 -0.2 Transistors Unit: mm +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 Features High Voltage: V(BR)CEO of 250 and 350 Volts. Available in 12 mm Tape and Reel +0.1 3.00-0.1 +0.2 0.90-0.2 +0.3 7.00-0.3 4 1 Base 1 2 2.9 4.6 3 +0.1 0.70-0.1 2 Collector 3 Emitter 4 Collector Absolute Maximum Ratings Ta = 25 Parameter Collector-Emitter Voltage (Open Base) Collector-Base Voltage (Open Emitter) Emitter-Base Voltage (Open Collector) Collector Current (DC) Total Power Dissipation @ TA = 25 * Derate above 25 Storage Temperature Range Junction Temperature Thermal Resistance from Junction-to-Ambient Maximum Temperature for Soldering Purposes Time in Solder Bath Tstg TJ RèJA TL Symbol VCEO VCBO VEBO IC PD Rating 250 300 5 1000 0.8 6.4 -65 to 150 150 156 260 10 Sec /W Unit V V V mA Watts mW/ * Device mounted on a FR-4 glass epoxy printed circuit board using minimum recommended footprint. Electrical Characteristics Ta = 25 Parameter Collector-Emitter Breakdown Voltage Collector-Base Cutoff Current Emitter-Base Cutoff Current DC Current Gain * Current-Gain — Bandwidth Product * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage * * Pulse Test: Pulse Width Symbol V(BR)CEO ICBO IEBO hFE fT VCE(sat) VBE(sat) Testconditons IC = 1.0 mA, IB = 0 VCB = 400 V, IE = 0 VEB = 5.0 V, IC = 0 IC = 20 mA, VCE = 10 V IC = 10 mA, VCE = 10 V, f = 5.0 MHz IC = 50 mA, IB = 4.0 mA IC = 50 mA, IB = 4.0 mA 40 70 0.5 1.3 MHz V V...