BSP230

DISCRETE SEMICONDUCTORS DATA SHEET BSP230 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of 1995 Apr 07 File under Discrete Semiconductors, SC13b 1997 Jun 17 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interruptor in telephone sets Relay, high speed and line transformer drivers. DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT223 plastic SMD package. PINNING - SOT223 PIN 1 2 3 4 SYMBOL g d s d DESCRIPTION gate drain source drain CAUTION 1 Top view handbook, halfpage BSP230 4 d g s 2 3 MAM121 Fig.1 Simplified outline and symbol. The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. QUICK REFERENCE DATA SYMBOL VDS VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation ID = −170 mA; VGS = −10 V Tamb ≤ 25 °C open drain ID = −1 mA; VDS = VGS CONDITIONS − − −1.7 − − − MIN. MAX. −300 ±20 −2.55 −210 17 1.5 V V V mA Ω W UNIT 1997 Jun 17 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System ...