BSP315

BSP 315 SIPMOS ® Small-Signal Transistor P channel Enhancement mode Logic Level VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 315 Type BSP 315 BSP 315 Pin 2 D Pin 3 S Pin 4 D VDS -50 V ID -1.1 A RDS(on) 0.8 Ω Package SOT-223 Marking BSP 315 Ordering Code Q67000-S75 Q67000-S249 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V VDS VDGR VGS ID RGS = 20 kΩ Gate source voltage Continuous drain current ± 20 A -1.1 TA = 39 °C DC drain current, pulsed IDpuls -4.4 TA = 25 °C Power dissipation Ptot 1.8 W TA = 25 °C Semiconductor Group 1 Sep-12-1996 BSP 315 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -1.1 -0.1 -10 -10 0.65 -2 -1 -100 -100 -100 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS µA nA nA Ω 0.8 VDS = -50 V, VGS = 0 V, ...