BSP316P

SIPMOS® Small-Signal-Transistor Feature P-Channel Enhancement mode Logic Level dv/dt rated Qualified according to AEC Q101 Halogen­free according to IE C 61249­2­21 BSP316P Product Summary VDS -100 V RDS(on) 1.8 Ω ID -0.68 A PG-SOT223-4-1 Gate pin1 Drain pin 2/4 Source pin 3 Type Package Tape and Reel Information Marking Packaging BSP316P PG-SOT223-4-1 H6327: 1000 pcs/reel BSP316P Non dry Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C TA=70°C ID Pulsed drain current TA=25°C Reverse diode dv/dt ID puls dv/dt IS=-0.68A, VDS=-48V, di/dt=-200A/µs, Tjmax=150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature VGS Ptot Tj , Tstg IEC climatic category; DIN IEC 68-1 ESD Class JESD22-A114-HBM Value -0.68 -0.54 -2.72 6 ±20 1.8 -55... +150 55/150/56 Class 1a Unit A kV/µs V W °C Rev. 2.0 Page 1 2016-05-30 Thermal Characteristics Parameter...