BSP319

BSP 319 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 319 Type BSP 319 VDS 50 V ID 3.8 A RDS(on) 0.07 Ω Package SOT-223 Marking BSP 319 Ordering Code Q67000-S273 Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values 3.8 Unit A ID IDpuls 15 TA = 29 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 90 mJ ID = 3.8 A, VDD = 25 V, RGS = 25 Ω L = 6.2 mH, Tj = 25 °C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot ± 14 ± 20 V W TA = 25 °C 1.8 Semiconductor Group 1 Sep-12-1996 BSP 319 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 10 10 0.06 2 V VGS = 0 V, ID = 0.25 mA, Tj = 0 °C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 10...