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BSR92P Datasheet

Part Number BSR92P
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Small Signal Transistor
Datasheet BSR92P DatasheetBSR92P Datasheet (PDF)

www.DataSheet4U.com BSR92P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode / Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 Product Summary V DS R DS(on),max ID -250 11 -0.14 V Ω A PG-SC59 Type BSR92P Package PG-SC59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LD Lead free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady sta.

  BSR92P   BSR92P






Small Signal Transistor

www.DataSheet4U.com BSR92P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode / Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 Product Summary V DS R DS(on),max ID -250 11 -0.14 V Ω A PG-SC59 Type BSR92P Package PG-SC59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LD Lead free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-C101 (HBM) T C=25 °C T A=25 °C I D=-0.14 A, R GS=25 Ω -0.14 -0.11 -0.56 24 ±20 0.5 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 mJ V W °C A Unit Rev 1.0 page 1 2007-04-10 www.DataSheet4U.com BSR92P Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state 250 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-130 µA V DS=-250 V, V GS=0 V, T j=25 °C V DS=-250 V, V GS=0 V, T j=150 °C Gate-source leakage current I GSS V GS=-20 V, V DS=0 V V GS=-2.8 .


2008-04-05 : EOTZ-240D15    EOTZ-240D15R    EOTZ-240D25    EOTZ-240D25R    EOTZ240D15    EOTZ240D15R    EOTZ240D25    EOTZ240D25R    EOMZ-240D15    EOMZ-240D15R   


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