Part Number

BSS101

Description

SIPMOS Small-Signal Transistor

Manufacture

Siemens Semiconductor

Total Page 7 Pages
PDF Download
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Features Datasheet pdf BSS 101 SIPMOS ® Small-Signal Transist or • N channel • Enhancement mode Logic Level • VGS(th) = 0.8...2.0 V Pin 1 S Type BSS 101 Type BSS 101 BS S 101 Pin 2 G Marking SS 101 Pin 3 D VDS 240 V ID 0.13 A RDS(on) 16 Ω Package TO-92 Ordering Code Q62702-S49 3 Q62702-S636 Tape and Reel Informatio n E6288 E6325 Maximum Ratings Paramete r Drain source voltage Drain-gate volta ge Symbol Values 240 240 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Gate-source peak voltage,aperiodic Con tinuous drain current VGS Vgs ID ± 1 4 ± 20 A 0.13 TA = 33 °C DC drain cu rrent, pulsed IDpuls 0.52 TA = 25 °C Power dissipation Ptot 0.63 W TA = 25 °C Semiconductor Group 1 12/05/1 997 BSS 101 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN I EC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA Electrical Character.
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BSS101 Datasheet
BSS 101
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 101
Type
BSS 101
BSS 101
VDS
240 V
ID
0.13 A
Ordering Code
Q62702-S493
Q62702-S636
Pin 1
S
Pin 2
G
RDS(on)
16
Package
TO-92
Tape and Reel Information
E6288
E6325
Marking
SS 101
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 33 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
240
240
± 14
± 20
0.13
0.52
0.63
Unit
V
A
W
Semiconductor Group
1
12/05/1997




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