BSS123WQ

BSS123WQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 100V RDS(ON) 6.0Ω @ VGS = 10V ID TA = +25°C 170mA Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Features and Benefits  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage  High Drain-Source Voltage Rating  Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability  PPAP Capable (Note 4) Applications  Small Servo Motor Control  Power MOSFET Gate Drivers  Switching Applications SOT323 Mechanical Data      D Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-0...