BSS138BK

SO T2 BSS138BK 60 V, 360 mA N-channel Trench MOSFET Rev. 1 — 4 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 3 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD protection up to 1.5 kV  AEC-Q101 qualified 1.3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 350 mA; Tj = 25 °C [1] Conditions Tj = 25 °C Min -20 - Typ 1 Max 60 20 360 1.6 Unit V V mA Ω Static characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Free Datasheet http://www.datasheet4u.com/ NXP Semiconductors BSS138BK 60 V, 360 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G S D gate source drain 1 2 G Simplified outline 3 Graphic symbol D SOT23 (TO-236AB) S 017aaa255 3. Ordering information Table 3. Ordering information Package Name BSS138BK TO-236AB Description plastic surface-mounted package; 3 leads Version SOT23 Type number 4. Marking Table 4. BSS138BK [1] % = placeh...