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BSS74 Datasheet

Part Number BSS74
Manufacturers Motorola
Logo Motorola
Description HIGH VOLTAGE TRANSISTOR
Datasheet BSS74 DatasheetBSS74 Datasheet (PDF)

T MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol BSS BSS BSS 74 75 76 VCEO 200 250 300 VCBO 200 250 300 VEBO 5.0 ic 0.5 PD 0.5 2.86 pd Tj, s tg 2.5 14.3 -65 to +200.

  BSS74   BSS74






Part Number BSS74
Manufacturers Central Semiconductor
Logo Central Semiconductor
Description PNP SILICON HIGH VOLTAGE TRANSISTOR
Datasheet BSS74 DatasheetBSS74 Datasheet (PDF)

BSS74 BSS75 BSS76 DATA SHEET PNP SILICON HIGH VOLTAGE TRANSISTOR JEDEC TO-18 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR BSS74 series types are hermetically sealed PNP small signal transistors manufactured by the epitaxial planar process designed for high voltage amplifier applications. MAXIMUM RATINGS (TA=25°C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Ju.

  BSS74   BSS74







Part Number BSS74
Manufacturers Seme LAB
Logo Seme LAB
Description HIGH VOLTAGE PNP SILICON TRANSISTOR
Datasheet BSS74 DatasheetBSS74 Datasheet (PDF)

LAB MECHANICAL DATA Dimensions in mm (inches) 5.84 (0.230) 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) SEME BSS74R HIGH VOLTAGE PNP SILICON TRANSISTOR 5.33 (0.210) 4.32 (0.170) 0.48 (0.019) 0.41 (0.016) dia. 2.54 (0.100) Nom. 3 2 1 TO–18 PACKAGE PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD TJ , TSTG RqJC Collector – Base Voltage Collector – Emitter Voltage Emitter – Base Voltage Continuous Collector Curren.

  BSS74   BSS74







HIGH VOLTAGE TRANSISTOR

T MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tc = 25°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol BSS BSS BSS 74 75 76 VCEO 200 250 300 VCBO 200 250 300 VEBO 5.0 ic 0.5 PD 0.5 2.86 pd Tj, s tg 2.5 14.3 -65 to +200 Unit Vdc Vdc Vdc Adc Watt mW/°C Watt mW/°C °c Symbol R»jc Max 70 Unit °C/W BSS74 BSS75 BSS76 CASE 79, STYLE 1 TO-18 (TO-206AA) HIGH VOLTAGE TRANSISTOR PNP SILICON ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) Characteristic Symbol OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (IC = 10 mA, Ib = 0) BSS74 BSS75 BSS76 V(BR)CEO Collector-Base Breakdown Voltage (IC = 100 uAdc, IE = 0) BSS74 BSS75 BSS76 V(BR)CB0 Emitter-Base Breakdown Voltage (l E = .


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