BSS79C

NPN Silicon Switching Transistors BSS 79 BSS 81 High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 80, BSS 82 (PNP) q Type BSS 79 B BSS 79 C BSS 81 B BSS 81 C Marking CEs CFs CDs CGs Ordering Code (tape and reel) Q62702-S503 Q62702-S501 Q62702-S555 Q62702-S605 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol BSS 79 VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 40 Values BSS 81 35 75 6 800 1 100 200 330 150 Unit V mA A mA mW ˚C – 65 … + 150 Rth JA Rth JS ≤ ≤ 290 220 K/W For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BSS 79 BSS 81 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 79 BSS 81 Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 60 V VCB = 60 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 5...