BSS84-HF

P-Channel MOSFET BSS84-HF P-Channel RoHS Device Halogen Free Features -VDS (V) = -50V -ID = -130 mA -RDS(ON) < 10Ω(VGS= -5V) Circuit diagram - G : Gate - S : Source - D : Drain D G S Maximum Ratings (at TA=25°C unless otherwise noted) SOT-23 0.055(1.40) 0.047(1.20) 0.046(1.17) 0.037(0.97) 0.114(3.00) 0.110(2.80) D GS 0.079(2.00) 0.070(1.80) 0.006(0.15) 0.003(0.08) 0.098(2.50) 0.091(2.30) 0.020(0.50) 0.012(0.30) Dimensions in inches and (millimeter) °C °C °C Electrical Characteristics (at TA=25°C unless otherwise noted) Parameter Symbol Test Conditions Drain-Source Breakdown Voltage VDSS ID=-250uA, VGS=0V Zero Gate Voltage Drain Current I DSS VDS=-25V, V GS=0V VDS=-50V, V GS=0V Gate-Body Leakage Current IGSS VDS=0V, V GS=±20V Gate Threshold Voltage VGS(th) VDS=VGS , ID=-1.0mA Static Drain-Source On-Resistance RDS(On) VGS=-5V, I D=-100mA Forward Transconductance gFS VDS=-25V, ID=-100mA, f=1.0KHz Input Capacitance Ciss Output Capacitance Coss VGS=0V, V DS=-5V, f=1MHz Reverse Transfer Capacitance C rss Turn-On DelayTime t d(on) Turn-On Rise Time Turn-Off DelayTime tr t d(off) VDD=-15V, I D=-0.25A, RL=50 1) Turn-Off Fall Time tf Gate Charge QT Maximum Body-Diode Continuous Current IS Maximum Body-Diode Pulsed Current ISM Diode Forward Voltage V SD ISD=-130mA,VGS=0V Notes :1) Switching Time is Essentially Independent of Operating Temperature. Min Typ Max Unit -50 V -0.1 A -15 ±10 A -0.8 -2 V 10 Ω 50 mS 30 10 pF 5 2.5 1 n...