Production specification
P-Channel Enhancement Mode Vertical D-MOS Transistor BSS84
FEATURES
Voltage controlled p-c...
Production specification
P-Channel Enhancement Mode Vertical D-MOS Transistor BSS84
FEATURES
Voltage controlled p-channel small
Pb
signal switch
Lead-free
High density cell design for low RDS(ON)
High saturation current
APPLICATIONS
Line current interrupter in telephone sets Relay,high speed and line transformer drivers
ORDERING INFORMATION
Type No.
Marking
BSS84
SP
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol Parameter
Value
VDS Drain-Source
voltage
-50
VGSO ID
PD
Gate -Source
voltage Drain current (Note 1)
Power Dissipation (Note 1) Derate Above 25°C
Continuous Pulse
±20 -130 -520 0.36
2.9
Units V V mA W mW/°C
RθJA TJ,Tstg TL
Thermal resistance,Junction-to-Ambient
Operating Junction and StorageTemperature Maximum Lead Temperature for Soldering Purposes, 1/16” from Case for 10 Seconds
350 °C/W -55 to +150 ℃
300 ℃
C230 Rev.A
www.gmesemi.com
1
Production specification
P-Channel Enhanc...