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BSS84A Datasheet

Part Number BSS84A
Manufacturers MCC
Logo MCC
Description P-Channel MOSFET
Datasheet BSS84A DatasheetBSS84A Datasheet (PDF)

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS84A Features • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: B84 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source.

  BSS84A   BSS84A






Part Number BSS84ZW
Manufacturers UTC
Logo UTC
Description P-CHANNEL POWER MOSFET
Datasheet BSS84A DatasheetBSS84ZW Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD BSS84ZW -0.13A, -50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-323 SMD package, and in most applications they require up to -0.13A DC and can deliver current up to -0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.  FEATURES * RDS(ON) ≤ 10 Ω @ VGS=-4.5V, ID=-0.1A  SYMBOL Power MOSFET  ORDERING INFO.

  BSS84A   BSS84A







Part Number BSS84ZT
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description P-Channel MOSFET
Datasheet BSS84A DatasheetBSS84ZT Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD BSS84ZT 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-523 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.  FEATURES * RDS(ON) < 10Ω @ VGS=-4.5V, ID=-0.1A  SYMBOL Power MOSFET  ORDERING INFORMATI.

  BSS84A   BSS84A







Part Number BSS84ZDW
Manufacturers UNISONIC TECHNOLOGIES
Logo UNISONIC TECHNOLOGIES
Description P-Channel MOSFET
Datasheet BSS84A DatasheetBSS84ZDW Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD BSS84ZDW Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION These P-Channel e nhancement mode field vertical D -MOS transistors are in a SOT-363 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particular ly suited to lo w voltage app lications requiring a low current high side switch. „ FEATURES * RDS(ON)=10Ω @ VGS=-4.5V „ SYMBOL „ ORDER.

  BSS84A   BSS84A







Part Number BSS84Z
Manufacturers Unisonic Technologies
Logo Unisonic Technologies
Description P-Channel MOSFET
Datasheet BSS84A DatasheetBSS84Z Datasheet (PDF)

UNISONIC TECHNOLOGIES CO., LTD BSS84Z -0.13A, -50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION These P-Channel enhancement mode field vertical D-MOS transistors are in a SOT-23-3 SMD package, and in most applications they require up to -0.13A DC and can deliver current up to -0.52A. This product is particularly suited to low voltage applications requiring a low current high side switch.  FEATURES * RDS(ON) ≤ 10 Ω @ VGS=-4.5V, ID=-0.1A  SYMBOL Power MOSFET  ORDERING INFO.

  BSS84A   BSS84A







Part Number BSS84W-G
Manufacturers MOSFET
Logo MOSFET
Description P-Channel MOSFET
Datasheet BSS84A DatasheetBSS84W-G Datasheet (PDF)

MOSFET BSS84W-G P-Channel RoHS Device Features - Low on-resistance. - Low gate threshold voltage. - Low input capacitance. - Fast Switching Speed. Circuit diagram 3 D 1 G S 2 1.Gate 2.Source 3.Drain 0.053(1.35) 0.045(1.15) SOT-323 0.087(2.20) 0.079(2.00) 3 12 0.055(1.40) 0.047(1.20) 0.037(0.95) Typ. 0.004(0.10) Typ. 0.094(2.40) 0.087(2.20) 0.012(0.30) Typ. 0.004(0.10) 0.001(0.02) 0.016(0.40) 0.010(0.25) Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterist.

  BSS84A   BSS84A







P-Channel MOSFET

MCC TM Micro Commercial Components   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# BSS84A Features • High dense cell design for extremely low RDS(ON) • Rugged and reliable • Lead free product is acquired • SOT-23 Package • Marking Code: B84 • Epoxy meets UL 94 V-0 flammability rating • Moisture Sensitivity Level 1 Maximum Ratings @ 25OC Unless Otherwise Specified Symbol VDS ID IDM VGS PD R©JA TJ TSTG Parameter Drain-source Voltage Drain Current-Continuous Drain Current-Pulsed Gate-source Voltage Total Power Dissipation Thermal Resistance Junction to Ambient Operating Junction Temperature Storage Temperature Rating -60 -0.17 -0.68 f20 225 556 -55 to +150 -55 to +150 Unit V A A V mW oC/W к к Internal Block Diagram D G S P-Channel Enhancement Mode Field Effect Transistor SOT-23 A D 3 1.GATE CB 2. SOURCE 3. DRAIN 12 FE G HJ K DIMENSIONS INCHES DIM MIN MAX A .110 .120 B .083 .104 C .


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