BSS84AKM

BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits „ Logic-level compatible „ Very fast switching „ Trench MOSFET technology „ ESD protection up to 1 kV „ AEC-Q101 qualified 1.3 Applications „ Relay driver „ High-speed line driver „ High-side loadswitch „ Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = -10 V; Tamb = 25 °C Min Typ Max Unit - - -50 V -20 - 20 V [1] - - -230 mA VGS = -10 V; ID = -100 mA; Tj = 25 °C - 4.5 7.5 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2. Nexperia BSS84AKM 50 V, 230 mA P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 Pinning information Symbol Description G gate S source D drain Simplified outline 1 3 2 Transparent top view SOT883 (SOT883) Graphic symbol D G S sym146 3. Ordering information Table 3. Ordering information Type number Package Name BSS84AKM SOT883 4. Marking Description leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm Table 4. Ma...