%66.5
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
z Low On-Resistance。 z Low Gate Threshold Voltage....
%66.5
P-Channel Enhancement Mode Field Effect Transistor
FEATURES
z Low On-Resistance。 z Low Gate Threshold
Voltage. z Low Input Capacitance. z Fast Switching Speed. z Available in Lead Free Version.
Pb
Lead-free
APPLICATIONS
z P-channel enhancement mode effect transistor.
ORDERING INFORMATION
Type No.
Marking
%66.5
K84
SOT-323
Package Code SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VDSS
Drain-Source
voltage
-50 V
VDGR
Drain-Gate
voltage
-50 V
VGSS
Gate -Source
voltage
continuous ±20
V
ID
Drain current (Note1)
continuous -130
mA
PD Power Dissipation (Note1)
200
mW
RθJA Thermal resistance,Junction-to-Ambient 625
℃/W
TJ, Tstg
Junction and Storage Temperature
-55 to +150
℃
Note: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on GALAXY Inc. suggested pad layoutdocument AP02001.
%66.5
P-Channel Enhancement Mode Field Effect Transistor
ELECTRICAL CHARACT...
