BSS84ZDW

UNISONIC TECHNOLOGIES CO., LTD BSS84ZDW Preliminary Power MOSFET 0.13A, 50V P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR „ DESCRIPTION These P-Channel e nhancement mode field vertical D -MOS transistors are in a SOT-363 SMD package, and in most applications they require up to 0.13A DC and can deliver current up to 0.52A. This product is particular ly suited to lo w voltage app lications requiring a low current high side switch. „ FEATURES * RDS(ON)=10Ω @ VGS=-4.5V „ SYMBOL „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free BSS84ZWL-AL6-R BSS84ZWG-AL6-R Package SOT-363 1 S1 Pin Assignment 2 3 4 5 G1 D2 S2 G2 6 D1 Packing Tape Reel „ MARKING www.unisonic.com.tw Copyright © 2013 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-896.a http://www.Datasheet4U.com BSS84ZDW „ PARAMETER Drain-Source Voltage Gate-Source Voltage Preliminary Power MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) SYMBOL VDSS VGSS RATINGS UNIT -50 V ±20 V DC -0.13 Continuous Drain Current ID A Pulse -0.52 Power Dissipation PD 0.36 W °C TJ Junction Temperature +150 °C TSTG -55 ~ +150 Storage Temperature Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA RATINGS θJA 350 UNIT °C/W PARAMETER SYMBOL Junction to Ambient „ ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) TYP MAX ...