BST40

REPLACEMENT TYPE : BST39.BST40 FEATURES  Low Current  High Voltage HEBST39.40(NPN) GENERAL PURPOSE TRANSISTOR MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Symbol Value Collector-Base Voltage BST39 BST40 VCBO 400 300 Collector-Emitter Voltage BST39 BST40 VCEO 350 250 Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation Thermal Resistance From Junction to Ambient Junction Temperature Storage Temperature VEBO IC PC RθJA TJ Tstg 5 100 500 250 150 -55~+150 Unit V V V mA mW °C/W °C °C SOT-89 1:BASE 2:COLLECTOR 3:EMITTER MARKING: BST39:AT1 BST40:AT2 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Test conditions Min Typ Max Unit Collector-Base Breakdown Voltage VCBO BST39 IC=100uA,IE=0 BST40 400 300 V Collector-Emitter Breakdown Voltage VCEO IC=1mA,IB=0 BST39 BST40 350 250 V Emitter-Base Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector...