DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BST50; BST51; BST52 NPN Darlington transistors
Product speci...
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D109
BST50; BST51; BST52 NPN Darlington transistors
Product specification Supersedes data of 1997 Apr 16 1999 Apr 26
Philips Semiconductors
Product specification
NPN Darlington transistors
FEATURES High current (max. 0.5 A) Low
voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS Industrial switching applications such as: – Print hammer – Solenoid – Relay and lamp driving. DESCRIPTION NPN Darlington transistor in a SOT89 plastic package. PNP complements: BST60, BST61 and BST62.
1 2
handbook, halfpage
BST50; BST51; BST52
PINNING PIN 1 2 3 emitter collector base DESCRIPTION
2 3
3
MAM327
1
MARKING TYPE NUMBER BST50 BST51 BST52 MARKING CODE AS1 AS2 AS3
Bottom view
Fig.1 Simplified outline (SOT89) and symbol.
1999 Apr 26
2
Philips Semiconductors
Product specification
NPN Darlington transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST50 BST51 BST52 VCES collector-emitter
voltage BST50 BST51 BST52 VEBO IC ICM IB Ptot Tstg Tj Tamb Note emitter-base
voltage collector current (DC) peak collector current base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector VBE = 0 PARAMETER collector-base
voltage CONDITIONS open emitter
BST50; BST51; BST52
MIN. − − − − − − − − − − − −65 − −65
MAX. 60 80 90 45 60 80 5 0.5 1.5 100 1.3 +150 150 +150 V V V V V V V A A
U...