BST76

DISCRETE SEMICONDUCTORS DATA SHEET BST76A N-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. APPLICATIONS Line current interrupter in telephone sets Relay, high-speed and line transformer drivers. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT54 (TO-92) variant package. handbook, halfpage BST76A PINNING - SOT54 (TO-92) variant PIN 1 2 3 SYMBOL s g d DESCRIPTION source gate drain d 1 2 3 g MAM146 s Fig.1 Simplified outline and symbol. QUICK REFERENCE DATA SYMBOL VDS VDS(SM) VGSO ID Ptot RDSon yfs PARAMETER drain-source voltage (DC) drain-source voltage gate-source voltage (DC) drain current (DC) total power dissipation drain-source on-state resistance forward transfer admittance Tamb ≤ 25 °C ID = 15 mA; VGS = 3 V ID = 300 mA; VDS = 15 V non-repetitive peak; tp ≤ 2 mS open drain CONDITIONS − − − − − 7 250 TYP. MAX. 180 200 ±20 300 1 10 − V V V mA W Ω mS UNIT 1997 Jun 20 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS VDS(SM) VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) drain-s...