BSV52

BSV52 SO2369/SO2369A SMALL SIGNAL NPN TRANSISTORS Type BSV52 SO2369 SO 2369A s Marking B2 N11 N81 s s SILICON EPITAXIAL PLANAR NPN TRANSISTORS MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS LOW CURRENT, FAST SWITCHING APPLICATIONS. 2 3 1 SOT-23 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CBO V CEO V EBO I CM P t ot T stg Tj Parameter SO2369/A Collector-Emitter Voltage (V BE = 0) Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Peak Current Total Dissipation at T c = 25 C Storage Temperature Max. O perating Junction Temperature o Value BSV52 20 20 12 5 0.2 200 -65 to 150 150 40 40 15 4.5 Uni t V V V V A mW o o C C March 1996 1/5 BSV52/SO2369/SO2369A THERMAL DATA R t hj-amb R th j-SR Thermal Resistance Junction-Ambient Thermal Resistance Junction-Substrate Max Max 620 400 o o C/W C/W Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CBO Parameter Collector Cut-off Current (IE = 0) Test Cond ition s V CB = 20 V for SO2369/SO 2369A V CB = 10 V for BSV52 o T j = 150 C V CB = 10 V for BSV52 V CB = 20 V for SO2369A I C = 10 µ A for SO2369/SO 2369A for BSV52 I C = 10 mA for SO2369/SO 2369A for BSV52 I C = 10 µ A for SO2369/SO 2369A for BSV52 I E = 10 µ A for SO2369/SO 2369A for BSV52 I C = 10 mA IB = 0.3 mA for BSV52 IB = 1 mA I C = 10 mA for SO2369A for BSV52 IB = 3 mA I C ...