SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BSW68
• Hermetic TO-39 Metal package. • Ideally suited for Switching
and General...
SILICON PLANAR EPITAXIAL NPN TRANSISTOR
BSW68
Hermetic TO-39 Metal package. Ideally suited for Switching
and General Purpose Applications Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base
Voltage
150V
VCEO
Collector – Emitter
Voltage
150V
VEBO
Emitter – Base
Voltage
6V
IC Continuous Collector Current
1.0A
ICM Peak Collector Current
2A
PD Total Power Dissipation at TA = 25°C
0.795W
Derate Above 25°C
4.5mW/°C
PD Total Power Dissipation at TC = 25°C
5W
Derate Above 25°C
28.6mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Max. 220 35
Units °C/W °C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semela...
