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BSX20 Datasheet

Part Number BSX20
Manufacturers NXP
Logo NXP
Description NPN transistor
Datasheet BSX20 DatasheetBSX20 Datasheet (PDF)

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed saturated switching (and HF amplifier applications). DESCRIPTION NPN switching transistor in a TO-18 metal package. 3 MAM264 BSX20 PINNING PIN 1 2 3 emit.

  BSX20   BSX20






Part Number BSX20
Manufacturers CDIL
Logo CDIL
Description NPN SILICON PLANAR EPITAXIAL TRANSISTORS
Datasheet BSX20 DatasheetBSX20 Datasheet (PDF)

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS BSX20 TO-18 APPLICATIONS High Speed Saturated Switching Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Base Voltage Collector -Emitter Voltage Collector -Emitter Voltage Emitter -Base Voltage Collector Peak Current (t=10us) Power Dissipation@ Ta=25 degC @Tc=25 deg C Operating And Storage Junction Temperature Range THERMAL RESISTANCE Junction to Case.

  BSX20   BSX20







Part Number BSX20
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description NPN Transistor
Datasheet BSX20 DatasheetBSX20 Datasheet (PDF)

BSX20 HIGH SPEED SATURATED SWITCHES DESCRIPTION The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. TO-18 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CES V CEO V EBO IC P t ot T stg Tj Parameter Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current (t = 10 µ s.

  BSX20   BSX20







Part Number BSX20
Manufacturers Motorola
Logo Motorola
Description NPN SILICON TRANSISTOR
Datasheet BSX20 DatasheetBSX20 Datasheet (PDF)

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Emitter Voltage (RBE = 10 Ohms) Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous @TaTotal Device Dissipation = 25°C Derate above 25°C Total Device Dissipation @Tq = 25°C Tc = 100°C Derate above 25°C Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Case Symbol VCEO VCER Value 15 20 Unit Vdc Vdc VCBO VEBO ic PD pd Tj. T s tg 40.

  BSX20   BSX20







Part Number BSX20
Manufacturers Micro Electronics
Logo Micro Electronics
Description NPN TRANSISTORS
Datasheet BSX20 DatasheetBSX20 Datasheet (PDF)

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  BSX20   BSX20







Part Number BSX20
Manufacturers Multicomp
Logo Multicomp
Description Low Power Bipolar Transistors
Datasheet BSX20 DatasheetBSX20 Datasheet (PDF)

BSX20 Low Power Bipolar Transistors Feature: • NPN Silicon Planar Switching Transistors. Applications: • High speed saturated switching applications. TO-18 Metal Can Package Dimensions A B C D E F G H J K L Minimum Maximum 5.24 5.84 4.52 4.97 4.31 5.33 0.40 0.53 - 0.76 - 1.27 - 2.97 0.91 1.17 0.71 1.21 12.70 - 45° Dimensions : Millimetres Pin Configuration: 1. Emitter 2. Base 3. Collector Page 1 07/04/06 V1.0 BSX20 Low Power Bipolar Transistors Absolute Maximum Ratings Descr.

  BSX20   BSX20







NPN transistor

DISCRETE SEMICONDUCTORS DATA SHEET M3D125 BSX20 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 14 Philips Semiconductors Product specification NPN switching transistor FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed saturated switching (and HF amplifier applications). DESCRIPTION NPN switching transistor in a TO-18 metal package. 3 MAM264 BSX20 PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION handbook, halfpage 1 3 2 1 2 Fig.1 Simplified outline (TO-18) and symbol. QUICK REFERENCE DATA SYMBOL VCBO VCEO IC Ptot hFE fT toff PARAMETER collector-base voltage collector-emitter voltage collector current (DC) total power dissipation DC current gain transition frequency turn-off time Tamb ≤ 25 °C IC = 10 mA; VCE = 1 V IC = 100 mA; VCE = 2 V IC = 10 mA; VCE = 10 V; f = 100 MHz ICon = 10 mA; IBon = 3 mA; IBoff = −1.5 mA open emitter open base CONDITIONS − − − − 40 20 500 − MIN. MAX. 40 15 200 360 120 − − 30 MHz ns V V mA mW UNIT 1997 May 14 2 Philips Semiconductors Product specification NPN switching transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature .


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