DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSX45; BSX46; BSX47 NPN medium power transistors
Product specification Super...
DISCRETE SEMICONDUCTORS
DATA SHEET
M3D111
BSX45; BSX46; BSX47 NPN medium power transistors
Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Apr 23
Philips Semiconductors
Product specification
NPN medium power transistors
FEATURES High current (max. 1 A) Low
voltage (max. 80 V). APPLICATIONS General industrial applications. DESCRIPTION NPN medium power transistor in a TO-39 metal package.
1 handbook, halfpage 2
BSX45; BSX46; BSX47
PINNING PIN 1 2 3 emitter base collector, connected to case DESCRIPTION
3 2
3
MAM317
1
Fig.1 Simplified outline (TO-39) and symbol.
QUICK REFERENCE DATA SYMBOL VCBO BSX45 BSX46 BSX47 VCEO collector-emitter
voltage BSX45 BSX46 BSX47 ICM Ptot hFE peak collector current total power dissipation DC current gain BSX45-10; BSX46-10; BSX47-10 BSX45-16; BSX46-16; BSX47-16 fT transition frequency Tcase ≤ 25 °C IC = 100 mA; VCE = 1 V 63 100 IC = 50 mA; VCE = 10 V; f = 100 MHz 50 100 160 − 160 250 − MHz open base − − − − − − − − − − 40 60 80 1.5 6.25 V V V A W PARAMETER collector-base
voltage CONDITIONS open emitter − − − − − − 80 100 120 V V V MIN. TYP. MAX. UNIT
1997 Apr 23
2
Philips Semiconductors
Product specification
NPN medium power transistors
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSX45 BSX46 BSX47 VCEO collector-emitter
voltage BSX45 BSX46 BSX47 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base
voltage collector current (DC) peak ...