Triacs. BT131-8D Datasheet

BT131-8D Datasheet PDF


BT131-8D
TM BT131-8D
HPM
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.
Description
Passivated, sensitive gate triacs in a plastic envelope, intended for use in general purpose
bidirectional switching and phase control applications, where high sensitivity is required in all
four quadrants.
Symbol
Simplified outline
T2 T1
G 123
TO-92
Pin Description
1 Main terminal 1 (T1)
2 gate (G)
3 Main terminal 2 (T2)
Applications:
Motor control
Industrial and domestic lighting
Heating
Static switching
Features
Blocking voltage to 800 V
On-state RMS current to 1 A
SYMBOL
VDRM
IT RMS
ITSM
PARAMETER
Repetitive peak off-state voltages
RMS on-state current
Non-repetitive peak on-state current
Value
800
1
16
Unit
V
A
A
SYMBOL
PARAMETER
Rth j-mb
Thermal resistance
Junction to mounting base
CONDITIONS
Full cycle
Half cycle
MIN
-
-
TYP
-
-
Rth j-a
Thermal resistance
Junction to ambient
Pcb mounted;
lead length=4mm
-
150
MAX
60
80
UNIT
K/W
K/W
- K/W
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Part BT131-8D
Description Sensitive Gate Triacs
Feature BT131-8D; TM BT131-8D HPM Sensitive Gate Triacs HAOPIN MICROELECTRONICS CO.,LTD. Description Passivated, s.
Manufacture HAOPIN
Datasheet
Download BT131-8D Datasheet

TM BT131-8D HPM Sensitive Gate Triacs HAOPIN MICROELECTRO BT131-8D Datasheet





BT131-8D
TM BT131-8D
HPM
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.
Limiting values in accordance with the Maximum system(IEC 134)
SYMBOL PARAMETER
VDRM
Repetitive peak off-state
Voltages
RMS on-state current
CONDITIONS
Full sine wave;Tlead<=51
MIN
-
-
IT(RMS)
I2t
DIT/dt
IGM
VGM
PGM
P G(AV)
Tstg
Tj
Non-repetitive peak
On-state current
I2t for fusing
Repetitive rate of vise of
on-state current after
trigering
Peak gate current
Peak gate voltage
Peak gate power
Average gate power
Storage temperature
Operating junction
Temperature
full sine wave;Tj=25
T=10ms
I =TM 1.5A; IG=0.2A;
D /IG dt=0.2A/ s
Over any 20 ms period
t=20ms
t=16.7ms
T2+G+
T2+G-
T2-G-
T2-G+
-
-
-
-
-
-
-
-
-
-
-
-40
-
MAX
800
1
UNIT
V
A
16
17.6
1.28
A
A
A2S
50 A/ s
50 A/ s
50 A/ s
10 A/ s
2A
5V
5W
0.5 W
150
125
TJ=25OC unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
Static characteristics
IGT
Gate trigger current
VD=12V; IT=0.1A
IL
Latching current
VD=12V; I =GT 0.1A
IH VD=12V; I =GT 0.1A
VT On-state voltage
IT=2.0A
VGT
Gate trigger voltage
VD=12V;IT=0.1A
VD=400V;IT=0.1A;TJ=125
ID Off-state leakage current VD=VDRM ;(max) TJ=125
T2+G+
T2+G-
T2-G-
T2-G+
T2+G+
T2+G-
T2-G-
T2-G+
Dynamic Characteristics
DVD/dt
tgt
Critical rate of rise of
Off-state voltage
Gate controlled turn-on
time
V =DM 67% VDRM(ma ;x) Tj=125 ;
Exponential wave form;R =GK 1k
I =TM 1.5A;VD=VDRM(max);
IG=0.1A;
DlG/dt=5A/ s
MIN TYP MAX UNIT
-
0.4 3
mA
-
1.3 3
mA
-
1.4 3
mA
-
3.8 7
mA
- 1.2 5 mA
- 4.0 8 mA
- 1.0 5 mA
- 2.5 8 mA
- 1.3 5 mA
- 1.2 1.5 V
- 0.7 1.5
0.2 0.3
-
V
V
- 0.1 0.5 mA
5 15 - V/ s
-2-
s
http://www.haopin.com
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BT131-8D
TM BT131-8D
HPM
Sensitive Gate Triacs
HAOPIN MICROELECTRONICS CO.,LTD.
Description
http://www.haopin.com
3/5






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