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BT137M-800E

NXP

Triacs sensitive gate

Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gat...


NXP

BT137M-800E

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Description
Philips Semiconductors Product specification Triacs sensitive gate GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope, suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. BT137S series E BT137M series E QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT137S (or BT137M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 8 65 600E 600 8 65 800E 800 8 65 V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 102 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 12 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 8 65 71 21 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating ...




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