isc Thyristors
INCHANGE Semiconductor
BT138X-800E
DESCRIPTION ·With TO-220F packaging ·Operating in 4 quadrants ·High ...
isc Thyristors
INCHANGE Semiconductor
BT138X-800E
DESCRIPTION ·With TO-220F packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·Solid state relays;heating and cooking appliances ·Switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VDRM VRRM IT(RSM) ITSM PG(AV)
Repetitive peak off-state
voltage
Repetitive peak reverse
voltage
Average on-state current
@Tc=56℃
Surge non-repetitive on-state current
50HZ 60HZ
Average gate power dissipation ( over any 20 ms period )
Tj
Operating junction temperature
Tstg Storage temperature
MAX
UNIT
800
V
800
V
12
A
95 105
A
0.5
W
-40~125 ℃ -40~150 ℃
ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)
SYMBOL
PARAMETER
CONDITIONS
IRRM
Repetitive peak reverse current VR=VRRM Rated;
IDRM Repetitive peak off-state current VD=VDRM Rated;
Tj=125℃
VTM On-state
voltage
IGT
Gate-trigger current
VGT Rth (j-c)
Gate-trigger
voltage Junction to case
IT=15A
Ⅰ
Ⅱ
VD =12V;IGT=0.1A
Ⅲ
Ⅳ
VD =12V;IGT=0.1A
Half cycle
MIN MAX UNIT
500 μA
1.65 V
10
10 10
mA
25
1.5 V
4.0 ℃/W
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isc & iscsemi is registered trademark
isc Thyristors
INCHANGE Semiconductor
BT138X-800E
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for...
