BT149D
SCR
21 August 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier in ...
BT149D
SCR
21 August 2018
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits.
2. Features and benefits
Planar passivated for
voltage ruggedness and reliability Sensitive gate Direct triggering from low power drivers and logic ICs A-G-K reverse pin-out
3. Applications
General purpose switching and phase control Low power circuits
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VRRM
repetitive peak reverse
voltage
IT(AV)
average on-state current
half sine wave; Tlead ≤ 83 °C; Fig. 1
IT(RMS)
RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2; Fig. 3
ITSM
non-repetitive peak on- half sine wave; Tj(init) = 25 °C;
state current
tp = 10 ms; Fig. 4; Fig. 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Tj
junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 10 mA; Tj = 25 °C;
Fig. 7
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 268 V; Tj = 125 °C; RGK = 1 kΩ; (VDM = 67% of VDRM); exponential waveform; Fig. 12
Min Typ Max Unit
-
-
400 V
-
-
0.5 A
-
-
0.8 A
-
-
8
A
-
-
9
A
-
-
125 °C
-
50
200 µA
500 800 -
V/µs
WeEn Semiconductors
BT149D
SCR
Symbol
Parameter
Conditions
VDM = 268 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential...